HYB25D256400BT Datasheet, PDF (54/77 Pages) Infineon Technologies AG – 256-Mbit Double Data Rate SDRAM, Die Rev. B

HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM, Die Rev. B
Normal Strength Pulldown and Pullup Currents
Voltage (V)
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
Nominal
Low
6.0
12.2
18.1
24.1
29.8
34.6
39.4
43.7
47.5
51.3
54.1
56.2
57.9
59.3
60.1
60.5
61.0
61.5
62.0
62.5
62.9
63.3
63.8
64.1
64.6
64.8
65.0
Pulldown Current (mA)
Nominal
High
Min
6.8
4.6
13.5
9.2
20.1
13.8
26.6
18.4
33.0
23.0
39.1
27.7
44.2
32.2
49.8
36.8
55.2
39.6
60.3
42.6
65.2
44.8
69.9
46.2
74.2
47.1
78.4
47.4
82.3
47.7
85.9
48.0
89.1
48.4
92.2
48.9
95.3
49.1
97.2
49.4
99.1
49.6
100.9
49.8
101.9
49.9
102.8
50.0
103.8
50.2
104.6
50.4
105.4
50.5
Max
9.6
18.2
26.0
33.9
41.8
49.4
56.8
63.2
69.9
76.3
82.5
88.3
93.8
99.1
103.8
108.4
112.1
115.9
119.6
123.3
126.5
129.5
132.4
135.0
137.3
139.2
140.8
Evaluation Conditions for I/O Driver Characteristics
Operating Temperature
V_DD / V_DDQ
Process Corner
Nominal
25 °C
2.5V
typical
Nominal
Low
-6.1
-12.2
-18.1
-24.0
-29.8
-34.3
-38.1
-41.1
-43.8
-46.0
-47.8
-49.2
-50.0
-50.5
-50.7
-51.0
-51.1
-51.3
-51.5
-51.6
-51.8
-52.0
-52.2
-52.3
-52.5
-52.7
-52.8
Pullup Current (mA)
Nominal
High
Min
-7.6
-4.6
-14.5
-9.2
-21.2
-13.8
-27.7
-18.4
-34.1
-23.0
-40.5
-27.7
-46.9
-33.2
-53.1
-36.0
-59.4
-38.2
-65.5
-38.7
-71.6
-39.0
-77.6
-39.2
-83.6
-39.4
-89.7
-39.6
-95.5
-39.9
-101.3
-40.1
-107.1
-40.2
-112.4
-40.3
-118.7
-40.4
-124.0
-40.5
-129.3
-40.6
-134.6
-40.7
-139.9
-40.8
-145.2
-40.9
-150.5
-41.0
-155.3
-41.1
-160.1
-41.2
Max
-10.0
-20.0
-29.8
-38.8
-46.8
-54.4
-61.8
-69.5
-77.3
-85.2
-93.0
-100.6
-108.1
-115.5
-123.0
-130.4
-136.7
-144.2
-150.5
-156.9
-163.2
-169.6
-176.0
-181.3
-187.6
-192.9
-198.2
Minimum
70 °C
2.3V
slow-slow
Maximum
0 °C
2.7V
fast-fast
Page 54 of 77
2003-01-09, V1.1