HYB25D256400BT Datasheet, PDF (53/77 Pages) Infineon Technologies AG – 256-Mbit Double Data Rate SDRAM, Die Rev. B

HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM, Die Rev. B
Normal Strength Pulldown and Pullup Characteristics
1. The nominal pulldown V-I curve for DDR SDRAM devices is expected, but not guaranteed, to lie within the
inner bounding lines of the V-I curve.
2. The full variation in driver pulldown current from minimum to maximum process, temperature, and voltage
lie within the outer bounding lines of the V-I curve.
Normal Strength Pulldown Characteristics
140
Maximum
120
100
Nominal High
80
60
Nominal Low
40
Minimum
20
0
0
0.5
1
1.5
2
2.5
V_OUT (V)
3. The nominal pullup V-I curve for DDR SDRAM devices is expected, but not guaranteed, to lie within the
inner bounding lines of the V-I curve.
4. The full variation in driver pullup current from minimum to maximum process, temperature, and voltage lie
within the outer bounding lines of the V-I curve.
Normal Strength Pullup Characteristics
0
-20
Minimum
-40
Nominal Low
-60
-80
-100
-120
-140
Nominal High
-160
Maximum
0
0.5
1
1.5
2
2.5
V_OUT (V)
5. The full variation in the ratio of the maximum to minimum pullup and pulldown current does not exceed
1.7, for device drain to source voltages from 0.1 to 1.0.
6. The full variation in the ratio of the nominal pullup to pulldown current should be unity ± 10%, for device
drain to source voltages from 0.1 to 1.0V.
Page 53 of 77
2003-01-09, V1.1