H27UAG8T2B Datasheet, PDF (57/61 Pages) Hynix Semiconductor – 16Gb (2048M x 8bit) NAND Flash

■ Figure 58. Ready / Busy
Release
H27UAG8T2B Series
16Gb (2048M x 8bit) NAND Flash
Rp _ibusy
Vcc
R/B#
open drain output
Ready Vcc
VOL : 0.4V, VOH : 2.4V
VOL
Busy
GND
Device
tf
300n
200n
100n
Fig. Rp vs tr, tf & Rp vs ibusy
@ Vcc = 3.3V, Ta = 25°C, CL=50pF
3.3
ibusy
1.65
381
290
189
96
4.2 tf 4.2
1.1
0.825
4.2
4.2
Rp value guidence
1k
2k
3k
4k
Rp (ohm)
Rp (min) = ^{Vcc (Max.) - VOL (Max.)} =
IOL + ™,L
3.2V
P$™,L
where IL is the sum of the input current of all devices tied to the R/B# pin.
Rp(max) is determined by maximum permissible limit of tr
VOH
tr
3m
2m
1m
Rev 1.0 / Aug. 2010
57