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H27UAG8T2B Datasheet, PDF (17/61 Pages) Hynix Semiconductor – 16Gb (2048M x 8bit) NAND Flash
2.7. AC Timing Characteristics
Parameter
CLE setup time
CLE Hold time
CE# setup time
CE# hold time
WE# pulse width
ALE setup time
ALE hold time
Data setup time
Data hold time
Write cycle time
WE# high hold time
Data transfer from cell to register
ALE to RE# delay
CLE to RE# delay
Ready to RE# low
RE# pulse width
WE# high to busy
Read cycle time
RE# access time
RE# high to output high Z
CE# high to output high Z
RE# high to output hold
RE# low to output hold
RE# or CE# high to output hold
RE# high hold time
CE# low to RE# low
WE# high to RE# low
RE# high to WE# low
Output high Z to RE# low
Address to data loading time
Symbol
tCLS
tCLH
tCS
tCH
tWP
tALS
tALH
tDS
tDH
tWC
tWH
tR
tAR
tCLR
tRR
tRP
tWB
tRC
tREA
tRHZ
tCHZ
tRHOH
tRLOH
tCOH
tREH
tCR
tWHR
tRHW
tIR
tADL
Release
H27UAG8T2B Series
16Gb (2048M x 8bit) NAND Flash
3.3V
Min
Max
12
5
20
5
12
12
5
12
5
25
10
200
10
10
25
12
100
25
20
100
50
15
5
15
10
10
100
100
0
100
Unit
㎱
㎱
㎱
㎱
㎱
㎱
㎱
㎱
㎱
㎱
㎱
㎲
㎱
㎱
㎱
㎱
㎱
㎱
㎱
㎱
㎱
㎱
㎱
㎱
㎱
㎱
㎱
㎱
㎱
㎱
Rev 1.0 / Aug. 2010
17