H27UAG8T2B Datasheet, PDF (4/61 Pages) Hynix Semiconductor – 16Gb (2048M x 8bit) NAND Flash

Release
H27UAG8T2B Series
16Gb (2048M x 8bit) NAND Flash
1. SUMMARY DESCRIPTION
The H27UAG8T2B is a single 3.3V 16Gbit NAND flash memory. The Device contains 2 planes in a single die. Each plane
is made up of the 512 blocks. Each block consists of 256 programmable pages. Each page contains 8,640 bytes. The
pages are subdivided into an 8,192-bytes main data storage area with a spare 448-byte district.
Page program operation can be performed in typical 1,600us, and a single block can be erased in typical 2.5ms. On-
chip control logic unit automates erase and program operations to maximize cycle endurance. E/W endurance is stipu-
lated at 3,000 cycles when using relevant ECC and Error management.
The H27UAG8T2B is a best solution for applications requiring large nonvolatile storage memory.
1.1. Product List
Table 1
PART NUMBER
H27UAG8T2B
ORGANIZATION
X8
Vcc RANGE
2.7V ~ 3.6V
PACKAGE
48 - TSOP1
Rev 1.0 / Aug. 2010
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