H27UAG8T2B Datasheet, PDF (15/61 Pages) Hynix Semiconductor – 16Gb (2048M x 8bit) NAND Flash

Release
H27UAG8T2B Series
16Gb (2048M x 8bit) NAND Flash
2.3. DC and Operating Characteristics
Parameter
Power on reset current
Operating
Current
Read
Program
Erase
Stand-by Current (TTL)
Stand-by Current (CMOS)
Input Leakage Current
Output Leakage Current
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Output Low Current (R/B#)
Symbol
I_CC0
I_CC1
I_CC2
I_CC3
I_CC4
I_CC5
I_LI
I_LO
V_IH
V_IL
V_OH
V_OL
I_OL(R/
B#)
Test
Conditions
FFh command input
after power on
t_RC= t_RC(min),
CE#=V_IL,
I_OUT=0 ㎃
-
H27UAG8T2B
3.3V
Min
Typ
Max
-
-
50per
device
-
-
50
-
-
50
-
-
-
50
CE#=V_IH, WP#=0V/
V_CC
-
CE#=VCC-0.2,
WP#=0V/V_CC
-
V_IN=0 to V_CC(MAX)
-
-
1
10
50
-
± 10
V_OUT=0 to V_CC(MAX)
-
-
± 10
-
Vccx0.8
-
Vcc+0.3
-
I_OH=-200 ㎂
I_OL=2.1 ㎃
-0.3
-
0.2x Vcc
2.4
-
-
-
-
0.4
V_OL=0.4V
8
10
-
Unit
㎃
㎃
㎃
㎃
㎃
㎂
㎂
㎂
V
V
V
V
㎃
2.4. AC Test Conditions
Parameter
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
Output Load (2.7V-3.6V)
Value
2.7V ≤ Vcc ≤ 3.6V
0 V to V_CC
5㎱
Vcc /2
1 TTL GATE and CL=50㎊
Notes:
1.
These parameters are verified device characterization and are not 100% tested.
Rev 1.0 / Aug. 2010
15