H27UAG8T2B Datasheet, PDF (14/61 Pages) Hynix Semiconductor – 16Gb (2048M x 8bit) NAND Flash

2. Electrical Characteristics
2.1. Valid Blocks
Symbol
Min
Valid Block
Number
N_VB
999
Release
H27UAG8T2B Series
16Gb (2048M x 8bit) NAND Flash
Typ
Max
Unit
1024
Blocks
Notes:
1. The 1st block is guaranteed to be a valid block at the time of shipment.
2. This single device has a maximum of 25 invalid blocks.
3. Invalid blocks are one that contains one or more bad bits. The device may contain bad blocks upon shipment.
2.2. Absolute Maximum Rating
Symbol
T_A
T_BIAS
T_STG
V_IO
V_CC
Parameter
Ambient Operating Temperature
(Commercial Temperature Range)
Ambient Operating Temperature
(Extended Temperature Range)
Ambient Operating Temperature
(Industrial Temperature Range)
Temperature Under Bias
Storage Temperature
Input or Output Voltage
Supply Voltage
Value
Min
0 to 70
-25 to 85
-40 to 85
-50 to 125
-65 to 150
-0.6 to 4.6
-0.6 to 4.6
Unit
°C
°C
°C
°C
°C
V
V
Notes:
1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute
Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or any other conditions above those indicated in the Operating sections of this
specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may
affect device reliability.
Refer also to the Hynix SURE Program and other relevant quality documents.
2. Minimum Voltage may undershoot to -2V during transition and for less than 20ns during transitions.
Rev 1.0 / Aug. 2010
14