H27UAG8T2B Datasheet, PDF (19/61 Pages) Hynix Semiconductor – 16Gb (2048M x 8bit) NAND Flash

Release
H27UAG8T2B Series
16Gb (2048M x 8bit) NAND Flash
2.9. Device Identifier Coding
Parameter
Device Identifier Byte
1^st
2^nd
3^rd
4^th
5^th
6^th
Symbol
Description
Manufacturer Code
Device Identifier
Internal chip number, cell Type, Number of Simultaneously Pro-
grammed Pages, Interleaved Program, Write Cache.
Page size, Block size, Redundant area size
Plane Number, ECC Level
Technology (Design Rule), EDO, Interface
2.10. Read ID Data Table
Part Number
Voltage
Bus
Width
Manufacture Device
Code
Code
3^rd
4^th
H27UAG8T2B
3.3V
X8
ADh
D5h
94h
9Ah
5^th
6^th
74h
42h
2.10.1. 3^rd Byte of Device Identifier Description
3^rd cycle
Description
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
I/O I/O I/O
2
1
0
Internal Chip Number
1
2
4
Reserved
0
0
0
1
1
0
1
1
Cell Type
2 Level Cell
4 Level Cell
8 Level Cell
16 Level Cell
0
0
0
1
1
0
1
1
1
Number of Simultaneously
2
Programmed Pages
4
8
0
0
0
1
1
0
1
1
Interleaved Program
Supported
0
between Multiple dice Not Supported
1
Write Cache
Not Supported 0
Supported
1
Rev 1.0 / Aug. 2010
19