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| H27UAG8T2B Datasheet, PDF (16/61 Pages) Hynix Semiconductor – 16Gb (2048M x 8bit) NAND Flash | |||
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2.5. Pin Capacitance (TA=25°C, F=1.0ã)
Release
H27UAG8T2B Series
16Gb (2048M x 8bit) NAND Flash
Symbol
CIN
CI/O
Parameter
Test
Condition
Min
Input Capacitance
VIN = 0V
-
Input/Output Capacitance
VIN = 0V
-
Max
10
10
Unit
Ãâ¹
Ãâ¹
2.6. Program/ Read / Erase Characteristics
Parameter
Symbol
Min
Program (following 10h)
tPROG
-
Cache Program (following 15h)
tCBSYW
-
multi plane Program / multi plane Cache
Program / multi plane Copy-Back Program
tDBSY
-
(following 11h)
Cache Read / multi plane Cache Read
(following 31h/3Fh)
tCBSYR
-
Block Erase / multi plane Block Erase
tBERS
-
Number of partial Program Cycles in the
same page
NOP
-
Notes:
1. Typical value is measured at VCC=3.3V, TA=25â. Not 100% tested.
Typ
1600
-
3
3
2.5
-
Max
5000
5000
5
200
10
1
Unit
ã²
ã²
ã²
ã²
ã³
cycles
Rev 1.0 / Aug. 2010
16
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