H27UAG8T2B Datasheet, PDF (3/61 Pages) Hynix Semiconductor – 16Gb (2048M x 8bit) NAND Flash

■ Multilevel Cell technology
■ Supply Voltage
- 3.3V device : Vcc = 2.7 V ~ 3.6 V
Vcc = 2.7 V ~ 3.6 V
■ Organization
- Page size : 8,640 Bytes(8,192+448 bytes)
- Block size : 256 pages(2M+112K bytes)
- Plane size : 512 blocks
■ Page Read Time
- Random Access: 200 ㎲ (Max.)
- Sequential Access : 25 ㎱ (Min.)
■ Write Time
- Page program : 1600 ㎲ (Typ.)
- Block erase : 2.5 ㎳ (Typ.)
■ Operating Current
- Read
- Program
- Erase
- Standby
■ Hardware Data Protection
- Program/Erase locked during power transitions
Release
H27UAG8T2B Series
16Gb (2048M x 8bit) NAND Flash
■ Endurance
- 3,000 P/E cycles (with 24 bit/ 1,024byte ECC)
■ Data Retention
- 10 Years
■ Package
- TSOP (12x20), 48Pin
- Wafer (Bare Die)
■ Unique ID for copyright protection
1. SUMMARY DESCRIPTION
Rev 1.0 / Aug. 2010
3