33889 Datasheet, PDF (10/60 Pages) Freescale Semiconductor, Inc – System Basis Chip with Low Speed Fault Tolerant CAN Interface

ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 4. Static Electrical Characteristics (continued).
Characteristics noted under conditions - VSUP From 5.5 V to 18 V and TJ from -40°C to 125°C, unless otherwise noted. Typical
values noted reflect the approximate parameter means at T_A = 25°C under nominal conditions unless otherwise noted.
Description
Symbol
Min
Typ
Max
Unit
Reset threshold 1
Default value after reset. ⁽¹⁵⁾
Reset threshold 2 ⁽¹⁵⁾
Reset duration
VDD1 range for Reset Active
Reset Delay Time
Measured at 50% of reset signal. ⁽¹⁶⁾
V_RST-TH1
4.5
4.6
V_RST-TH2
4.1
4.2
RESET-DUR
0.85
1.0
V_DD
1.0
-
t_D
5.0
-
4.7
V
4.3
V
2.0
ms
-
V
20
µs
Line Regulation
9.0 V < V_SUP < 18, I_DD = 10 mA
LR1
-
5.0
25
mV
Line Regulation
5.5 V < V_SUP < 27 V, I_DD = 10 mA
LR2
-
10
25
mV
Load Regulation
1 mA < I_IDD < 200 mA
LD
-
25
75
mV
Thermal stability
V_SUP = 13.5 V, I = 100 mA
V2 REGULATOR (V2) ⁽¹⁷⁾
THERMS
-
5.0
-
mV
V2 Output Voltage
I2 from 2.0 to 200 mA
5.5 V < V_SUP < 27 V
V2
0.99
1.0
1.01
V_DD1
I2 output current (for information only)
Depending on the external ballast transistor
I2
200
-
-
mA
V2 CTRL sink current capability
V2LOW flag threshold
Internal V2 Supply Current (CAN and SBC in Normal
Mode). TX = 5.0 V, CAN in Recessive State
I2_CTRL
10
-
-
mA
V2L_TH
3.75
4.0
4.25
V
I_V2RS
3.8
5.6
6.8
mA
Internal V2 Supply Current (CAN and SBC in Normal
Mode). TX = 0.0 V, No Load, CAN in Dominant State
I_V2DS
4.0
5.8
7.0
mA
Internal V2 Supply Current (CAN in Receive Only Mode,
I_V2R
SBC in Normal mode). V_SUP = 12 V
80
120
µA
Internal V2 Supply Current (CAN in Bus TermVbat mode,
SBC in normal mode), V_SUP = 12 V
I_V2BT
35
60
µA
Notes
15. Selectable by SPI
16. Guaranteed by design
17. V2 TRACKING VOLTAGE REGULATOR - V2 specification with external capacitor
- option 1: C ≥ 22 µF and ESR < 10 ohm. Using a resistor of 2 kohm or less between the base and emitter of the external PNP is
recommended.
- option2: 1.0 µF < C < 22 µF and ESR < 10 ohm. In this case depending on the ballast transistor gain an additional resistor and
capacitor network between emitter and base of PNP ballast transistor might be required. Refer to Freescale application information
or contact your local technical support.
- option 3: 10uF < C < 22uF ESR > 0.2 ohms: a resistor of 2 kohm or less is required between the base and emitter of the external PNP.
33889
10
Analog Integrated Circuit Device Data
Freescale Semiconductor