M13S5121632A-2S Datasheet, PDF(5/48 Page) Elite Semiconductor Memory Technology Inc. – Double-data-rate architecture, two data transfers per clock cycle

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M13S5121632A-2S Datasheet, PDF (5/48 Pages) Elite Semiconductor Memory Technology Inc. – Double-data-rate architecture, two data transfers per clock cycle

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ESMT

M13S5121632A (2S)

DC Operation Conditions - continued

Parameter

Output High Current (Full strength driver â Normal)

(VOUT =VDDQ-0.373V, min VREF, min VTT)

Output Low Current (Full strength driver â Normal)

(VOUT = 0.373V, max VREF, max VTT)

Output High Current (Reduced strength driver âWeak)

(VOUT = VDDQ-0.763V, min VREF, min VTT)

Output Low Current (Reduced strength driver â Weak)

(VOUT = 0.763V, max VREF, max VTT)

Output High Current (Reduced strength driver â

Matched impedance)

(VOUT = VDDQ-1.056V, min VREF, min VTT)

Output Low Current (Reduced strength driver â

Matched impedance)

(VOUT = 1.056V, max VREF, max VTT)

Symbol

IOH

IOL

IOH

IOL

IOH

IOL

Min

-15

+15

-9

-4.5

+4.5

Max

Unit Note

mA 5, 7

Notes:

1. VREF is expected to be equal to 0.5* VDDQ of the transmitting device, and to track variations in the DC level of the same.

Peak-to-peak noise on VREF may not exceed 2% of the DC value.

2. VTT is not applied directly to the device. VTT is system supply for signal termination resistors, is expected to be set

equal to VREF, and must track variations in the DC level of VREF.

3. VID is the magnitude of the difference between the input level on CLK and the input level on CLK .

4. The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the entire

temperature and voltage range, for device drain to source voltages from 0.25 V to 1.0 V. For a given output, it represents

the maximum difference between pullup and pulldown drivers due to process variation. The full variation in the ratio of the

maximum to minimum pullup and pulldown current will not exceed 1.7 for device drain to source voltages from 0.1 to 1.0.

5. VOH = 1.95V, VOL =0.35V.

6. VOH = 1.9V, VOL =0.4V.

7. The values of IOH(DC) is based on VDDQ = 2.3V and VTT = 1.19V.

The values of IOL(DC) is based on VDDQ = 2.3V and VTT = 1.11V.

Elite Semiconductor Memory Technology Inc.

Publication Date : Jul. 2014

Revision : 1.1

5/48

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