PD488588 Datasheet, PDF (42/79 Pages) Elpida Memory – 288M bits Direct Rambus DRAM

µPD488588
Figure 22-1 Control Registers (3/7)
Control Register : REFB
Address : 04116
15 14 13 12 11 10
9
8
7
6
5
4
3
2
1
0
0
0
0
0
0
0
0
0
0
0
0
REFB4..0
Read/write register.
Field
Description
REFB4..0 ^{Refresh Bank Register. REFB4..REFB0 is the bank that will be refreshed next during self-refresh. REFB4..0}
is incremented after each self-refresh activate and precharge operation pair.
Reset
value
0
Control Register : REFR
Address : 04216
15 14 13 12 11 10
9
8
7
6
5
4
3
2
1
0
0
0
0
0
0
0
0
REFR8..0
Read/write register.
Field
Description
REFR8..0
Refresh Row register. REFR8..REFR0 is the row that will be refreshed next by the REFA command or by
self-refresh. REFR8..0 is incremented when BR4..0=11111 for the REFA command. REFR8..0 is
incremented when REFB4..0=11111 for self-refresh.
Reset
value
0
Control Register : CCA
Address : 04316
15 14 13 12 11 10
9
8
7
6
5
4
3
2
1
0
ASYM
0
0
0
0
0
0
0
0
A0
CCA6..0
Read/write register.
Field
ASYMA0
CCA6..0
Description
ASYMA0 control the asymmetry of the VOL/VOH voltage swing about the VREF reference voltage for the
DQA8..0 pins.
ASYMA0
ODF
0
0.00
1
0.12
Where ODF is the Over Drive Factor (the extra IOL current sunk by an RSL output when ASYMA0 is set).
Current Control A. Controls the IOL output current for the DQA8..DQA0 pins.
Reset
value
0
Control Register : CCB
Address : 04416
15 14 13 12 11 10
9
8
7
6
5
4
3
2
1
0
ASYM
0
0
0
0
0
0
0
0
B0
CCB6..0
Read/write register.
Field
ASYMB0
CCB6..0
Description
ASYMB0 control the asymmetry of the VOL/VOH voltage swing about the VREF reference voltage for the
DQB8..0 pins.
ASYMB0
ODF
0
0.00
1
0.12
Where ODF is the Over Drive Factor (the extra IOL current sunk by an RSL output when ASYMB0 is set).
Current Control B. Controls the IOL output current for the DQB8..DQB0 pins.
Reset
value
0
42
Data Sheet E0039N30 (Ver. 3.0)