EPM240_10 Datasheet, PDF (61/88 Pages) Altera Corporation – MAX II Device Family Data

Chapter 5: DC and Switching Characteristics
5–3
Operating Conditions
Programming/Erasure Specifications
Table 5–3 shows the MAX II device family programming/erasure specifications.
Table 5–3. MAX II Device Programming/Erasure Specifications
Parameter
Minimum
Typical
Maximum
Erase and reprogram cycles
—
—
100 (1)
Note to Table 5–3:
(1) This specification applies to the UFM and configuration flash memory (CFM) blocks.
Unit
Cycles
DC Electrical Characteristics
Table 5–4 shows the MAX II device family DC electrical characteristics.
Table 5–4. MAX II Device DC Electrical Characteristics (Note 1) (Part 1 of 2)
Symbol
Parameter
Conditions
Minimum Typical Maximum Unit
I_I
Input pin leakage
VI = VCCIOmax to 0 V (2)
–10
—
10
µA
current
I_OZ
Tri-stated I/O pin
VO = VCCIOmax to 0 V (2)
–10
—
10
µA
leakage current
I_{CCS TANDBY}
VCCINT supply current
(standby) (3)
MAX II devices
MAX IIG devices
—
12
—
mA
—
2
—
mA
EPM240Z (Commercial
—
25
90
µA
grade) (4)
EPM240Z (Industrial
grade) (5)
—
25
139
µA
EPM570Z (Commercial
—
27
96
µA
grade) (4)
EPM570Z (Industrial
grade) (5)
—
27
152
µA
V_SCHMITT (6)
I_{CCP OWERUP}
Hysteresis for Schmitt
trigger input (7)
VCCINT supply current
during power-up (8)
VCCIO = 3.3 V
V = CCIO 2.5 V
MAX II devices
MAX IIG and MAX IIZ
devices
—
400
—
mV
—
190
—
mV
—
55
—
mA
—
40
—
mA
R_{P UL L UP}
Value of I/O pin pull-up
resistor during user
mode and in-system
programming
V_CCIO = 3.3 V (9)
VCCIO = 2.5 V (9)
VCCIO = 1.8 V (9)
VCCIO = 1.5 V (9)
5
—
25
k
10
—
40
k
25
—
60
k
45
—
95
k
© August 2009 Altera Corporation
MAX II Device Handbook