XC3S50A-4TQG144C Datasheet, PDF (11/132 Pages) Xilinx, Inc – Spartan-3A FPGA Family

DS529-3 (v2.0) August 19, 2010
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Spartan-3A FPGA Family:
DC and Switching Characteristics
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Product Specification
DC Electrical Characteristics
In this section, specifications may be designated as
Advance, Preliminary, or Production. These terms are
defined as follows:
Advance: Initial estimates are based on simulation, early
characterization, and/or extrapolation from the
characteristics of other families. Values are subject to
change. Use as estimates, not for production.
Preliminary: Based on characterization. Further changes
are not expected.
Production: These specifications are approved once the
silicon has been characterized over numerous production
lots. Parameter values are considered stable with no future
changes expected.
All parameter limits are representative of worst-case supply
voltage and junction temperature conditions. Unless
otherwise noted, the published parameter values apply
to all Spartan®-3A devices. AC and DC characteristics
are specified using the same numbers for both
commercial and industrial grades.
Absolute Maximum Ratings
Stresses beyond those listed under Table 4: Absolute
Maximum Ratings may cause permanent damage to the
device. These are stress ratings only; functional operation
of the device at these or any other conditions beyond those
listed under the Recommended Operating Conditions is not
implied. Exposure to absolute maximum conditions for
extended periods of time adversely affects device reliability.
Table 4: Absolute Maximum Ratings
Symbol
Description
Conditions
Min
Max
Units
V_CCINT
V_CCAUX
V_CCO
V_REF
V_IN
I_IK
Internal supply voltage
Auxiliary supply voltage
Output driver supply voltage
Input reference voltage
Voltage applied to all User I/O pins and
dual-purpose pins
Voltage applied to all Dedicated pins
Input clamp current per I/O pin
Driver in a high-impedance state
–0.5V < V_IN < (V_CCO + 0.5V)⁽¹⁾
Human body model
–0.5
1.32
V
–0.5
3.75
V
–0.5
3.75
V
–0.5
V_CCO + 0.5
V
–0.95
4.6
V
–0.5
4.6
V
–
±100
mA
–
±2000
V
V_ESD Electrostatic Discharge Voltage
Charged device model
Machine model
–
±500
V
–
±200
V
T_J
T_STG
Junction temperature
Storage temperature
–
125
°C
–65
150
°C
Notes:
1. Upper clamp applies only when using PCI IOSTANDARDs.
2. For soldering guidelines, see UG112: Device Packaging and Thermal Characteristics and XAPP427: Implementation and Solder Reflow
Guidelines for Pb-Free Packages.
© Copyright 2006–2010 Xilinx, Inc. XILINX, the Xilinx logo, Virtex, Spartan, ISE, and other designated brands included herein are trademarks of Xilinx in the United States and
other countries. PCI is a registered trademark of the PCI-SIG. All other trademarks are the property of their respective owners.
DS529-3 (v2.0) August 19, 2010
www.xilinx.com
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