LM3S1512_16 Datasheet, PDF (254/660 Pages) Texas Instruments – Stellaris LM3S1512 Microcontroller

Internal Memory
7 Internal Memory
The LM3S1512 microcontroller comes with 64 KB of bit-banded SRAM and 96 KB of flash memory.
The flash controller provides a user-friendly interface, making flash programming a simple task.
Flash protection can be applied to the flash memory on a 2-KB block basis.
7.1 Block Diagram
Figure 7-1 on page 254 illustrates the Flash functions. The dashed boxes in the figure indicate
registers residing in the System Control module rather than the Flash Control module.
Figure 7-1. Flash Block Diagram
Cortex-M3
Icode Bus
Dcode Bus
Flash Control
FMA
FMD
FMC
FCRIS
FCIM
FCMISC
Flash Array
7.2
7.2.1
Bridge
Flash Protection
FMPREn
FMPPEn
SRAM Array
Flash Timing
USECRL
User Registers
USER_DBG
USER_REG0
USER_REG1
Functional Description
This section describes the functionality of the SRAM and Flash memories.
SRAM Memory
The internal SRAM of the Stellaris^® devices is located at address 0x2000.0000 of the device memory
map. To reduce the number of time consuming read-modify-write (RMW) operations, ARM has
introduced bit-banding technology in the Cortex-M3 processor. With a bit-band-enabled processor,
certain regions in the memory map (SRAM and peripheral space) can use address aliases to access
individual bits in a single, atomic operation.
The bit-band alias is calculated by using the formula:
bit-band alias = bit-band base + (byte offset * 32) + (bit number * 4)
For example, if bit 3 at address 0x2000.1000 is to be modified, the bit-band alias is calculated as:
254
July 15, 2014
Texas Instruments-Production Data