DS90UB914ATRHSTQ1 Datasheet, PDF (60/68 Pages) Texas Instruments – DS90UB913A-Q1/DS90UB914A-Q1 25 to100 MHz 10/12-Bit

DS90UB913A-Q1, DS90UB914A-Q1
SNLS443A – MAY 2013 – REVISED JUNE 2013
DS90UB914AQ (DES)
1.8V
VDDIO
VDDD
C3
C11
VDDIO1
C8 C16
C18
VDDR
C4
C12
VDDIO2
C9
1.8V
FB1
1.8V
FB2
Serial
FPD-Link II
Interface
1.8V
10 kQ
RMODE
I2C
Bus
Interface
VDDSSCG
C5
C13
C6 C14
VDDPLL
C17
C7 C15
VDDCML
C19
C1
C2
C1
C2
VDDIO
RIN1+
RIN1-
RIN0+
RIN0-
GPIO[0]
GPIO[1]
GPIO[2]
GPIO[3]
MODE
PDB
SEL
OEN
OSS_SEL
BISTEN
FB3
FB4
Optional
RPU
C20
RPU
SCL
SDA
C21
Optional
RES_PIN43
DAP (GND)
VDDIO3
C10
ROUT0
ROUT1
ROUT2
ROUT3
ROUT4
ROUT5
ROUT6
ROUT7
ROUT8
ROUT9
ROUT10
ROUT11
HS
VS
PCLK
LOCK
PASS
IDx[0]
LVCMOS
Parallel
Outputs
1.8V
10 kQ
RID0
1.8V
IDx[1]
10 kQ
RID1
NOTE:
C1 - C2 = 0.1 µF (50 WV)
C3 - C10 = 0.01 µF
C11 - C16 = 0.1 µF
C17 - C18 = 4.7 µF
C19 = 22 µF
C20 - C21 = >100 pF
RPU = 1 kQ to 4.7 kQ
RID (see ID[x] Resistor Value Table)
FB1 - FB4: Impedance = 1 kQ (@ 100 MHz)
low DC resistance (<1Q)
The "Optional" components shown are
provisions to provide higher system noise
immunity and will therefore result in higher
performance.
Figure 50. DS90UB914A-Q1 Typical Connection Diagram — Pin Control (STP)
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PCB Layout and Power System Considerations
Circuit board layout and stack-up for the Ser/Des devices should be designed to provide low-noise power feed to
the device. Good layout practice will also separate high frequency or high-level inputs and outputs to minimize
unwanted stray noise pickup, feedback and interference. Power system performance may be greatly improved by
using thin dielectrics (2 to 4 mils) for power / ground sandwiches. This arrangement provides plane capacitance
for the PCB power system with low-inductance parasitics, which has proven especially effective at high
frequencies, and makes the value and placement of external bypass capacitors less critical. External bypass
capacitors should include both RF ceramic and tantalum electrolytic types. RF capacitors may use values in the
range of 0.01 µF to 0.1 µF. Tantalum capacitors may be in the 2.2 µF to 10 µF range. Voltage rating of the
tantalum capacitors should be at least 5X the power supply voltage being used.
60
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