S71GL032A Datasheet, PDF (80/102 Pages) SPANSION – Stacked Multi-Chip Product (MCP) Flash Memory and RAM

Advance Information
Erase And Programming Performance
Parameter
Sector Erase Time
Chip Erase Time
S29GL032A
S29GL064A
Total Write Buffer Program Time (Notes 3, 5)
Total Accelerated Effective Write Buffer Program Time
(Notes 4, 5)
Chip Program Time
S29GL032A
S29GL064A
Typ (Note 1)
0.5
32
64
240
200
31.5
63
Max
(Note 2)
3.5
64
128
Unit
sec
µs
µs
sec
Comments
Excludes 00h
programming
prior to erasure
(Note 6)
Excludes system
level overhead
(Note 7)
Notes:
1. Typical program and erase times assume the following conditions: 25°C, V_CC = 3.0V, 10,000 cycles; checkerboard
data pattern.
2. Under worst case conditions of 90°C; Worst case V_CC, 100,000 cycles.
3. Effective programming time (typ) is 15 µs (per word), 7.5 µs (per byte).
4. Effective accelerated programming time (typ) is 12.5 µs (per word), 6.3 µs (per byte).
5. Effective write buffer specification is calculated on a per-word/per-byte basis for a 16-word/32-byte write buffer
operation.
6. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
7. System-level overhead is the time required to execute the command sequence(s) for the program command. See
Table 22 for further information on command definitions.
80
S71GL032A Based MCPs
S71GL032A_00_A0 March 31, 2005