S71GL032A Datasheet, PDF (78/102 Pages) SPANSION – Stacked Multi-Chip Product (MCP) Flash Memory and RAM

Advance Information
Alternate CE# Controlled Erase and Program Operations-S29GL032A
Parameter
Speed Options
JEDEC
Std.
Description
90
10
11
Unit
t_AVAV
t_WC
Write Cycle Time (Note 1)
Min
90
100
110
ns
t_AVWL
t_AS
Address Setup Time
Min
0
ns
t_ELAX
t_AH
Address Hold Time
Min
45
ns
t_DVEH
t_DS
Data Setup Time
Min
35
ns
t_EHDX
t_DH
Data Hold Time
Min
0
ns
t_GHEL
t_GHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t_WLEL
t_WS
WE# Setup Time
Min
0
ns
t_EHWH
t_WH
WE# Hold Time
Min
0
ns
t_ELEH
t_CP
CE# Pulse Width
Min
35
ns
t_EHEL
t_CPH
CE# Pulse Width High
Min
25
ns
Write Buffer Program Operation (Notes 2, 3)
Typ
240
t_WHWH1
t_WHWH1 Single Word Program Operation (Note 2)
Typ
60
µs
Accelerated Single Word Program Operation (Note 2)
Typ
54
t_WHWH2
t_WHWH2 Sector Erase Operation (Note 2)
Typ
0.5
sec
t_RH
RESET# High Time Before Write
Min
50
ns
t_POLL
Program Valid before Status Polling (Note 4)
Max
4
µs
Notes:
1. Not 100% tested.
2. See “Erase And Programming Performance” for more information
3. For 1–16 words/1–32 bytes programmed.
4. If a program suspend command is issued within t_POLL, the device requires t_POLL before reading status data, once
programming resumes (that is, the program resume command has been written). If the suspend command was issued after
t_POLL, status data is available immediately after programming resumes. See Figure 24.
78
S71GL032A Based MCPs
S71GL032A_00_A0 March 31, 2005