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K4C89183AF Datasheet, PDF (7/55 Pages) Samsung semiconductor – 288Mb x18 Network-DRAM2 Specification
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K4C89183AF
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
Notes
VDD
Power Supply Voltage
-0.3 ~ 3.3
V
VDDQ
Power Supply Voltage (for I/O buffer)
-0.3 ~ VDD + 0.3
V
VIN
Input Voltage
-0.3 ~ VDD + 0.3
V
VOUT
DQ pin Voltage
-0.3 ~ VDDQ + 0.3
V
VREF
Input Reference Voltage
-0.3 ~ VDDQ + 0.3
V
TOPR
Operating Temperature
0 ~ 85
OC
TSTG
Storage Temperature
-55 ~ 150
OC
TSOLDER
Soldering Temperature(10s)
260
OC
PD
Power Dissipation
2
W
IOUT
Short Circuit Output Current
± 50
mA
Case Temp.
Caution : Conditions outside the limits listed under "ABSOLUTE MAXIMUM RATINGS" may cause permanent damage to the device.
The device is not meant to be operated under conditions outside the limits described in the operational section of this specifi-
cation. Exposure to "ABSOLUTE MAXIMUM RATINGS" conditions for extended periods may affect device reliability.
Recommended DC,AC Operating Conditions (Notes : 1) (Tcase = 0 ~ 85 OC)
Symbol
Parameter
VDD
Power Supply Voltage
VDDQ Power Supply Voltage (for I/O Buffer)
VREF
Input Reference Voltage
VIH (DC) Input DC high Voltage
VIL(DC) Input DC Low Voltage
VICK (DC) Differential Clock DC Input Voltage
VID (DC) Input Differential Voltage. CLK and CLK Inputs (DC)
VIH (AC) Input AC High Voltage
VIL (AC) Input AC Low Voltage
VID (AC) Input Differential Voltage. CLK and CLK Inputs (AC)
VX (AC) Differential AC Input Cross Point Voltage
VISO (AC) Differential Clock AC Middle Level
Min
Typ
2.375
2.5
Max
2.625
Units Notes
V
1.7
1.8
1.9
V
VDDQ/2x95% VDDQ/2 VDDQ/2x105% V
VREF+0.125
-
VDDQ+0.2
V
-0.1
-
VREF-0.125
V
-0.1
-
VDDQ+0.1
V
0.4
-
VDDQ+0.2
V
VREF+0.2
-
VDDQ+0.2
V
-0.1
-
VREF-0.2
V
0.55
-
VDDQ+0.2
V
VDDQ/2-0.125
-
VDDQ/2+0.125 V
VDDQ/2-0.125
-
VDDQ/2+0.125 V
2
5
5
10
7,10
3,6
4,6
7,10
8,10
9,10
-7-
REV. 0.7 Jan. 2005
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