K4C89183AF Datasheet, PDF (2/55 Pages) Samsung semiconductor – 288Mb x18 Network-DRAM2 Specification

K4C89183AF
Revision History
Version 0.0 (Oct. 2002)
- First Release
Version 0.01 (Nov. 2002)
- Changed die revision from D-die to F-die
- Corrected typo
- Corrected DQS to DS and QS(DQS -> DS and QS) in AC timing table and timing diagram.
Version 0.1 (Apr. 2003)
- Added 800Mbps(400Mhz) product
- Changed operating temperature from Ta to Tc.
- Changed capacitance of ADDR/CMD/CLK
Addr/CMD/CLK
From
Min Max
1.5
2.5
To
Min Max
1.5
3.0
- Changed tDSS(DS input Falling Edge to Clock Setup Time)
From
To
F6
FB
F5
G7
F6
FB
F5
CL4
0.9
0.9
1.0
0.75 0.75
0.8
1.0
CL5
0.9
0.9
1.0
0.75 0.75
0.8
1.0
CL6
0.9
0.9
1.0
0.75 0.75
0.8
1.0
CL7
-
-
-
0.75
-
-
-
- Added CL7 for 800Mbps
- Deleted TSOP package outline
Version 0.11 (Apr. 2003)
- Corrected typo in page 3.(Deleted bi-directional strobe)
- Corrected min. Vref to VDDQ/2x95% in page 7
Version 0.2 (Aug. 2003)
- Added package physical dimension
- Extracted 800Mbps(G7) binning from target spec ( G7 will be added in the future)
- Changed DC test condition
From
IDD1S,IDD2N,IDD2P,IDD5,IDD6
-
To
IDD1S,IDD2N,IDD2P,IDD5B,IDD6
IDD4W, IDD4R
- Changed low frequency spec like below
Changed point
Changed condition
newly inserted
From
To
Unit : ns
F6
FB
F5
F6
FB
F5
tCK max@CL=4 7.5
7.5
7.5
6.0
6.0
6.0
tCK max@CL=5 7.5
7.5
7.5
6.0
6.0
6.0
tCK max@CL=6 7.5
7.5
7.5
6.0
6.0
6.0
- Changed AC test load picture
Version 0.3 (Nov. 2003)
- Changed Packge type from die-exposed to full molded
- Changed Package code in Partnumber
-2-
REV. 0.7 Jan. 2005