English
Language : 

K4C89183AF Datasheet, PDF (13/55 Pages) Samsung semiconductor – 288Mb x18 Network-DRAM2 Specification
K4C89183AF
AC Test Conditions
Symbol
VIH(min)
VIL (max)
VREF
VTT
VSWING
VR
VID(AC)
SLEW
VOTR
Parameter
Input high voltage (minimum)
Input low voltage (maximum)
Input reference voltage
Termination voltage
Input signal peak to peak swing
Differential clock input reference level
Input differential voltage
Input signal minimum slew rate
Output timing measurement reference voltage
VddQ
VSWING
VIH min(AC)
VREF
VIL max(AC)
Vss
∆T
∆T
Slew=(VIHmin(AC) - VILmax(AC))/∆T
Value
VREF + 0.2
VREF - 0.2
VddQ/2
VREF
0.7
VX(AC)
1.0
2.5
VddQ/2
Units
V
V
V
V
V
V
V
V/ns
V
Notes
9
VTT
Output
25 Ω
Measurement Point
AC Test Load
Notes : 1. Transition times are measured between VIH min(DC) and VIL max(DC).
Transition (rise and fall) of input signals have a fixed slope.
2. If the result of nominal calculation with regard to tCK contains more than
one decimal place, the result is rounded up to the nearest decimal place.
(i.e., tDQSS = 0.8*tCK, tCK = 3.3ns, 0.8*3.3 ns = 2.64 ns is rounded up to 2.7 ns.)
3. These parameters are measured from the differential clock (CLK and CLK) AC cross point.
4. These parameters are measured from signal transition point of DS crossing VREF level.
5. The tREFI (MAX.) applies to equally distributed refresh method.
The tREFI (MIN.) applies to both burst refresh method and distributed refresh method.
In such case, the average interval of eight consecutive Auto-Refresh commands has to be more than 400ns always. In
other words, the number of Auto- Refresh cycles which can be performed within 3.2us (8X400ns) is to 8 times in the
maximum.
6. Low Impedance State is speified at VddQ/2± 0.2V from steady state.
7. High Impedance State is specified where output buffer is no longer driven.
8. These parameters depend on the clock jitter. These parameters are measured at stable clock.
9. Output timing is measured by using Normal driver strength at VDDQ = 1.7V ~ 1.9V.
Output timing is measured by using Strong driver strength at VDDQ = 1.4V ~ 1.6V
- 13 -
REV. 0.7 Jan. 2005