K4C89183AF Datasheet, PDF (18/55 Pages) Samsung semiconductor – 288Mb x18 Network-DRAM2 Specification

K4C89183AF
Write Timing (Burst Length = 4)
Unidirectional DS/QS mode, Unidirectional DS/Free Running QS mode
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
t_CH
t_CL
t_CK
CK
CK
Input
(Control &
Addresses)
t_IS t_{IH LAL(after RDA)}
CAS latency = 4
t_DQSS
t_DSPRES
t_DSPREH
t_DSP
DESL
t_DSP
t_DSPSTH
t_DSS
t_DSP t_DSPST
LDS/UDS
(Input)
Preamble
t_DSPRE t_DS
t_DSS
t_DS
Postamble
t_DS
DQ
(Input)
t_DH
t_DH
t_DH
Q0 Q1 Q2 Q3
CAS latency = 5
LDS/UDS
(Input)
DQ
(Input)
t_DQSS
t_DSPRES
t_DSPREH
t_DSP
t_DSS
t_DSP
t_DSS
t_DSPSTH
t_DSP t_DSPST
Preamble
t_DSPRE
t_DS t_DS
t_DS
t_DH
t_DH
t_DH
Postamble
Q0 Q1 Q2 Q3
CAS latency = 6
LDS/UDS
(Input)
DQ
(Input)
t_DQSS
t_DSPRES
t_DSPREH
t_DSP
t_DSS
t_DSP
t_DSS
t_DSPSTH
t_DSP t_DSPST
Preamble
t_DSPRE
t_DS t_DS
t_DS
t_DH
t_DH
t_DH
Postamble
Q0 Q1 Q2 Q3
LQS/UQS
Low
(Uni-QS)
LQS/UQS
(Free Runninig)
Note : DQ0 to DQ17 are sampled at both edges of LDS.
DQ18 to DQ35 are sampled at both edges of UDS.
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REV. 0.7 Jan. 2005