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K4C89183AF Datasheet, PDF (32/55 Pages) Samsung semiconductor – 288Mb x18 Network-DRAM2 Specification
K4C89183AF
Single Bank Read-Write Timing (CL=5)
CLK
CLK
Command
0
1
RDA LAL
2
3
4
lRC=6cycles
DESL
5
6
7
8
9
10
11
12
13
14
15
WRA LAL
lRC=6cycles
DESL
RDA LAL
DESL
Address
UA
LA
UA
LA
UA
LA
Bank Add.
#0
Unidirectional DS/QS mode
DS
(input)
QS
(Output)
Low
DQ
Hi-Z
Unidirectional DS/Free Running QS mode
DS
(input)
QS
(Output)
DQ
Hi-Z
CL=5
CL=5
#0
#0
Q0 Q1 Q2 Q3
WL=4
D0 D1 D2 D3
Q0 Q1 Q2 Q3
Read data
WL=4
D0 D1 D2 D3
Write data
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REV. 0.7 Jan. 2005