K4C89183AF Datasheet, PDF (10/55 Pages) Samsung semiconductor – 288Mb x18 Network-DRAM2 Specification

K4C89183AF
DC Characteristics and Operating Conditions (VDD = 2.5V ± 0.125V, VDDQ = 1.8V ± 0.1V, Tcase = 0~85 °C)
Parameter
Symbol
Min
Max Unit Notes
Input Leakage Current (0V<=V_IN<=VddQ, All other pins not under test = 0V)
I_LI
-5
5
uA
Output Leakage Current (Output disabled, 0V<=V_OUT<=VddQ)
I_LO
-5
5
uA
V_REF Current
I_REF
-5
5
uA
Normal Output
Driver
V_OH = 1.420V
I_OH(DC)
-5.6
-
4
V_OL = 0.280V
I_OL(DC)
5.6
-
4
Strong Output Output DC Current
Driver
(V_DDQ = 1.7 ~ 1.9V)
V_OH = 1.420V
V_OL = 0.280V
I_OH(DC)
-9.8
I_OL(DC)
9.8
-
4
mA
-
4
Weak Output
Driver
V_OH = 1.420V
I_OH(DC)
-2.8
-
4
V_OL = 0.280V
I_OL(DC)
2.8
-
Normal Output
Driver
V_OH = V_DDQ - 0.4
I_OH(DC)
-4
-
3
V_OL = 0.4V
I_OL(DC)
-4
-
3
Strong Output Output DC Current
Driver
(V_DDQ = 1.4 ~ 1.6V)
V_OH = V_DDQ - 0.4
V_OL = 0.4V
I_OH(DC)
-8
I_OL(DC)
-8
-
3
mA
-
3
Weak Output
Driver
Not defined
Not defined
I_OH(DC)
-
-
I_OL(DC)
-
-
Notes : 1. These parameters depend on the cycle rate and these values are measured at a cycle rate with the minimum values of
t_CK, t_RC and I_RC.
2. These parameters depend on the output loading. The specified values are obtained with the output open.
3. I_DD5B is specified under burst refresh condition. Actual system should use distributed refresh that meet to t_REFI specification
4. Refer to output driver characteristics for the detail. Output Driver Strength is selected by Extended Mode Register.
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REV. 0.7 Jan. 2005