K5D5657DCM-F015 Datasheet, PDF (68/74 Pages) Samsung semiconductor – MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM

K5D5657DCM-F015
Preliminary
MCP MEMORY
Write Interrupted by Precharge Command & Write Burst Stop Cycle @ Full Page Burst,
tRDL=2CLK
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
CLOCK
CKE
HIGH
CS
RAS
CAS
ADDR
RAa
CAa
CAb
BA0
BA1
A10/AP
RAa
DQ
tBDL
*Note 1
DAa0 DAa1 DAa2 DAa3 DAa4
*Note 1,2
DAb0 DAb1 DAb2 DAb3 DAb4 DAb5
tRDL
WE
DQM
Row Active
(A-Bank)
Write
(A-Bank)
Burst Stop
Write
(A-Bank)
*NOTE:
1. At full page mode, burst is finished by burst stop or precharge.
2. Data-in at the cycle of interrupted by precharge can not be written into the corresponding
memory cell. It is defined by AC parameter of tRDL.
DQM at write interrupted by precharge command is needed to prevent invalid write.
DQM should mask invalid input data on precharge command cycle when asserting precharge
before end of burst. Input data after Row precharge cycle will be masked internally.
3. Burst stop is valid at every burst length.
Precharge
(A-Bank)
: Don’t care
- 68 -
Revision 0.0
June 2003