K5D5657DCM-F015 Datasheet, PDF (46/74 Pages) Samsung semiconductor – MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM

K5D5657DCM-F015
Preliminary
MCP MEMORY
E. BASIC FEATURE AND FUNCTION DESCRIPTIONS
1. CLOCK Suspend
1) Clock Suspended During Write
CLK
CMD
CKE
Internal
CLK
DQ(CL2)
DQ(CL3)
WR
D0 D1
D0 D1
Masked by CKE
D2 D3
D2 D3
Not Written
2) Clock Suspended During Read (BL=4)
CLK
CMD
RD
CKE
Internal
CLK
DQ(CL2)
DQ(CL3)
Masked by CKE
Q0 ^DQ1
Q0
Q2
Q3
Q1
Q2 Q3
Suspended Dout
2. DQM Operation
1) Write Mask (BL=4)
CLK
CMD
WR
DQM
DQ(CL2)
DQ(CL3)
D0 D1
D0 D1
Masked by CKE
D3
D3
DQM to Data-in Mask = 0
3) DQM with Clock Suspended (Full Page Read) ^*2
CLK
CMD _RD
CKE
DQM
DQ(CL2)
DQ(CL3)
Q0
Hi-Z
Q2
Hi-Z
Q1
2) Read Mask (BL=4)
CLK
CMD
RD
DQM
DQ(CL2)
DQ(CL3)
Masked by CKE
Q0 ^Hi-Z Q2 Q3
Hi-Z _{Q1 Q2 Q3}
DQM to Data-out Mask = 2
Hi-Z _Q4
Hi-Z _Q3
Hi-Z
Q6 Q7 Q8
Hi-Z
Q5 Q6 Q7
*NOTE :
1. CKE to CLK disable/enable = 1CLK.
2. DQM makes data out Hi-Z after 2CLKs which should masked by CKE " L"
3. DQM masks both data-in and data-out.
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Revision 0.0
June 2003