K5D5657DCM-F015 Datasheet, PDF (54/74 Pages) Samsung semiconductor – MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM

K5D5657DCM-F015
FUNCTION TRUTH TABLE (TABLE 1)
Current
CS RAS CAS WE
BA
H
X
X
X
X
L
H
H
H
X
L
H
H
L
X
Precharging
L
H
L
X
BA
L
L
H
H
BA
L
L
H
L
BA
L
L
L
X
X
H
X
X
X
X
L
H
H
H
X
Row
L
H
H
L
X
Activating
L
H
L
X
BA
L
L
H
H
BA
L
L
H
L
BA
L
L
L
X
X
H
X
X
X
X
L
H
H
X
X
Refreshing
L
H
L
X
X
L
L
H
X
X
L
L
L
X
X
H
X
X
X
X
Mode
L
H
H
H
X
Register
Accessing
L
H
H
L
X
L
H
L
X
X
L
L
X
X
X
Preliminary
MCP MEMORY
Address
Action
X
NOP --> Idle after tRP
X
NOP --> Idle after tRP
X
ILLEGAL
CA
ILLEGAL
RA
ILLEGAL
A10/AP NOP --> Idle after tRP
X
ILLEGAL
X
NOP --> Row Active after tRCD
X
NOP --> Row Active after tRCD
X
ILLEGAL
CA
ILLEGAL
RA
ILLEGAL
A10/AP ILLEGAL
X
ILLEGAL
X
NOP --> Idle after tRC
X
NOP --> Idle after tRC
X
ILLEGAL
X
ILLEGAL
X
ILLEGAL
X
NOP --> Idle after 2 clocks
X
NOP --> Idle after 2 clocks
X
ILLEGAL
X
ILLEGAL
X
ILLEGAL
Note
2
2
2
4
2
2
2
2
Abbreviations : RA = Row Address
NOP = No Operation Command
BA = Bank Address
CA = Column Address
AP = Auto Precharge
*NOTE:
1. All entries assume the CKE was active (High) during the precharge clock and the current clock cycle.
2. Illegal to bank in specified state ; Function may be Iegal in the bank indicated by BA, depending on the
state of that bank.
3. Must satisfy bus contention, bus turn around, and/or write recovery requirements.
4. NOP to bank precharging or in idle state. May precharge bank indicated by BA (and A10/AP).
5. Illegal if any bank is not idle.
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Revision 0.0
June 2003