K5D5657DCM-F015 Datasheet, PDF (17/74 Pages) Samsung semiconductor – MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM

K5D5657DCM-F015
Preliminary
MCP MEMORY
System Interface Using CE don’t-care.
For an easier system interface, CE may be inactive during the data-loading or sequential data-reading as shown below. The internal
528byte page registers are utilized as seperate buffers for this operation and the system design gets more flexible. In addition, for
voice or audio applications which use slow cycle time on the order of u-seconds, de-activating CE during the data-loading and reading
would provide significant savings in power consumption.
Figure 4. Program Operation with CE don’t-care.
CLE
CE
CE don’t-care
WE
ALE
I/Ox
CE
WE
80h Start Add.(3Cycle)
tCS
tCH
tWP
Data Input
CE
RE
I/Ox
Data Input
10h
tCEA
tREA
tOH
out
Figure 5. Read Operation with CE don’t-care.
CLE
CE
RE
ALE
R/B
WE
I/Ox
tR
00h Start Add.(3Cycle)
- 17 -
CE don’t-care
Data Output(sequential)
Revision 0.0
June 2003