K5D5657DCM-F015 Datasheet, PDF (36/74 Pages) Samsung semiconductor – MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM

K5D5657DCM-F015
Preliminary
MCP MEMORY
AC CHARACTERISTICS(AC operating conditions unless otherwise noted)
Parameter
Symbol
-1L
Min
Max
CLK cycle time
CAS latency=3
tCC
9.5
CLK cycle time
CAS latency=2
tCC
15
1000
CLK cycle time
CAS latency=1
tCC
25
CLK to valid output delay
CAS latency=3
tSAC
7
CLK to valid output delay
CAS latency=2
tSAC
8
CLK to valid output delay
CAS latency=1
tSAC
20
Output data hold time
CAS latency=3
tOH
2.5
Output data hold time
CAS latency=2
tOH
2.5
Output data hold time
CAS latency=1
tOH
2.5
CLK high pulse width
tCH
3.5
CLK low pulse width
tCL
3.5
Input setup time
tSS
3.0
Input hold time
tSH
1.5
CLK to output in Low-Z
tSLZ
1
CAS latency=3
7
CLK to output in Hi-Z
CAS latency=2
tSHZ
8
CAS latency=1
20
NOTES :
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
-15
Min
Max
15
15
1000
30
9
9
24
2.5
2.5
2.5
3.5
3.5
4.0
2.0
1
9
9
24
Unit
Note
ns
1
ns
1,2
ns
2
ns
3
ns
3
ns
3
ns
3
ns
2
ns
- 36 -
Revision 0.0
June 2003