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K5D5657DCM-F015 Datasheet, PDF (27/74 Pages) Samsung semiconductor – MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM
K5D5657DCM-F015
Preliminary
MCP MEMORY
BLOCK ERASE
The Erase operation is done on a block basis. Block address loading is accomplished in two cycles initiated by an Erase Setup com-
mand(60h). Only address A14 to A24 is valid while A9 to A13 is ignored. The Erase Confirm command(D0h) following the block address
loading initiates the internal erasing process. This two-step sequence of setup followed by execution command ensures that memory
contents are not accidentally erased due to external noise conditions.
At the rising edge of WE after the erase confirm command input, the internal write controller handles erase and erase-verify. When
the erase operation is completed, the Write Status Bit(I/O 0) may be checked. Figure 10 details the sequence.
Figure 10. Block Erase Operation
tBERS
R/B
I/Ox
60h
Address Input(2Cycle)
D0h
Block Add. : A9 ~ A24
70h
I/O0
Pass
Fail
READ STATUS
The device contains a Status Register which may be read to find out whether program or erase operation is completed, and whether
the program or erase operation is completed successfully. After writing 70h command to the command register, a read cycle outputs
the content of the Status Register to the I/O pins on the falling edge of CE or RE, whichever occurs last. This two line control allows
the system to poll the progress of each device in multiple memory connections even when R/B pins are common-wired. RE or CE
does not need to be toggled for updated status. Refer to table 3 for specific Status Register definitions. The command register
remains in Status Read mode until further commands are issued to it. Therefore, if the status register is read during a random read
cycle, a read command(00h or 50h) should be given before sequential page read cycle.
Table3. Read Status Register Definition
I/O #
Status
I/O 0
Program / Erase
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
Reserved for Future
Use
Device Operation
Write Protect
Definition
"0" : Successful Program / Erase
"1" : Error in Program / Erase
"0"
"0"
"0"
"0"
"0"
"0" : Busy
"1" : Ready
"0" : Protected
"1" : Not Protected
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Revision 0.0
June 2003