K5D5657DCM-F015 Datasheet, PDF (12/74 Pages) Samsung semiconductor – MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM

K5D5657DCM-F015
Preliminary
MCP MEMORY
AC Timing Characteristics for Command / Address / Data Input
Parameter
CLE Set-up Time
CLE Hold Time
CE Setup Time
CE Hold Time
WE Pulse Width
ALE Setup Time
ALE Hold Time
Data Setup Time
Data Hold Time
Write Cycle Time
WE High Hold Time
Symbol
tCLS
tCLH
tCS
tCH
tWP
tALS
tALH
tDS
tDH
tWC
tWH
Min
0
10
0
10
25 ⁽¹⁾
0
10
20
10
45
15
Max
-
-
.-
-
-
-
-
-
-
-
-
NOTE :
1. If tCS is set less than 10ns, tWP must be minimum 35ns, otherwise, tWP may be minimum 25ns.
AC Characteristics for Operation
Parameter
Data Transfer from Cell to Register
ALE to RE Delay
CLE to RE Delay
Ready to RE Low
RE Pulse Width
WE High to Busy
Read Cycle Time
CE Access Time
RE Access Time
RE High to Output Hi-Z
CE High to Output Hi-Z
RE or CE High to Output hold
RE High Hold Time
Output Hi-Z to RE Low
WE High to RE Low
WE High to RE Low in Block Lcok Mode
Device Resetting Time(Read/Program/Erase)
Symbol
Min
tR
-
tAR
10
tCLR
10
tRR
20
tRP
25
tWB
-
tRC
50
tCEA
-
tREA
-
tRHZ
-
tCHZ
-
tOH
15
tREH
15
tIR
0
tWHR1
60
tWHR2
100
tRST
-
NOTE :
1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.
2. To break the sequential read cycle, CE must be held high for longer time than tCEH.
3. The time to Ready depends on the value of the pull-up resistor tied R/B pin.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Max
Unit
10
µs
-
ns
-
ns
-
ns
-
ns
100
ns
-
ns
45
ns
30
ns
30
ns
20
ns
-
ns
-
ns
-
ns
-
ns
-
ns
5/10/500⁽¹⁾
µs
- 12 -
Revision 0.0
June 2003