K5D5657DCM-F015 Datasheet, PDF (50/74 Pages) Samsung semiconductor – MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM

K5D5657DCM-F015
8. Burst Stop & Interrupted by Precharge
1) Normal Write
BL=4 & tRDL=2CLK
CLK
CMD
WR
DQM
PRE
DQ
D0 D1 D2
tRDL^*1
2) Write Burst Stop (BL=8)
CLK
CMD
WR
STOP
DQM
DQ
D0 D1 D2 D3
tBDL ^*2
4) Read Burst Stop (BL=4)
CLK
CMD
RD
DQ(CL2)
DQ(CL3)
STOP
Q0 Q1 ¹
Q0 Q1 ²
Preliminary
MCP MEMORY
3) Read Interrupted by Precharge (BL=4)
CLK
CMD
RD
DQ(CL2)
DQ(CL3)
PRE
Q0 Q1 ¹
Q0 Q1 ²
9. MRS
1) Mode Register Set
CLK
CMD
*4
PRE
tRP
MRS
ACT
2CLK
*NOTE:
1. SAMSUNG can support tRDL=2 CLK.
2. tBDL : 1 CLK ; Last data in to burst stop delay.
Read or write burst stop command is valid at every burst length.
3. Number of valid output data after row precharge or burst stop : 1, 2 for CAS latency= 2, 3 respectively.
4. PRE : All banks precharge is necessary.
MRS can be issued only at all banks precharge state.
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Revision 0.0
June 2003