K4E661612D Datasheet, PDF (5/36 Pages) Samsung semiconductor – CMOS DRAM

Industrial Temperature
K4E661612D,K4E641612D
C A P A C I T A N C E (T A= 2 5 °C, V CC =3.3V, f=1MHz)
Parameter
Symbol
Input capacitance [A0 ~ A12]
C IN1
I n p u t c a p a c i t a n c e [R A S , U C A S , L C A S , W , O E ]
C IN2
Output capacitance [DQ0 - DQ15]
C DQ
Min
-
-
-
CMOS DRAM
Max
5
7
7
Units
pF
pF
pF
A C C H A R A C T E R I S T I C S (-40°C ≤T A≤85°C , S e e n o t e 2 )
Test condition : V CC = 3 . 3 V ±0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V
Parameter
Symbol
-45
Min Max
Random read or write cycle time
tRC
74
Read-modify-write cycle time
tRWC
101
Access time fromRAS
Access time fromCAS
tRAC
45
tCAC
12
Access time from column address
tAA
23
C A S to output in Low-Z
tCLZ
3
Output buffer turn-off delay from CAS
tCEZ
3
13
O E to output in Low-Z
tOLZ
3
Transition time (rise and fall)
R A S precharge time
tT
tR P
1
50
25
R A S pulse width
tRAS
45
10K
RAS hold time
tRSH
8
CAS hold time
tCSH
35
C A S pulse width
tCAS
7
5K
R A S to C A S delay time
RAS to column address delay time
tRCD
tRAD
11
33
9
22
C A S to R A S precharge time
tCRP
5
Row address set-up time
tASR
0
Row address hold time
tRAH
7
Column address set-up time
Column address hold time
tASC
0
tCAH
7
Column address to RAS lead time
tRAL
23
Read command set-up time
tRCS
0
Read command hold time referenced to CAS
tRCH
0
Read command hold time referenced to RAS
tRRH
0
Write command hold time
Write command pulse width
tWCH
7
tW P
6
Write command to RAS lead time
tRWL
8
Write command to CAS lead time
tCWL
7
Data set-up time
tD S
0
-50
Min
Max
84
113
50
13
25
3
3
13
3
1
50
30
50
10K
8
38
8
10K
11
37
9
25
5
0
7
0
7
25
0
0
0
7
7
8
7
0
-60
Min
Max
104
138
60
15
30
3
3
13
3
1
50
40
60
10K
10
40
10
10K
14
45
12
30
5
0
10
0
10
30
0
0
0
10
10
10
10
0
Unit
s
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
3,4,10
3,4,5
3,10
3
6,20
3
2
4
10
13
13
8
8
16
9,19