K4E661612D Datasheet, PDF(15/36 Page) Samsung semiconductor

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K4E661612D Datasheet, PDF (15/36 Pages) Samsung semiconductor – CMOS DRAM

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Industrial Temperature

K4E661612D,K4E641612D

UPPER BYTE WRITE CYCLE ( EARLY WRITE )

NOTE : DOUT = OPEN

VIH -

RAS

V IL -

V IH -

UCAS

V IL -

VIH -

LCAS

V IL -

VIH -

V IL -

V IH -

V IL -

V IH -

V IL -

DQ0 ~ DQ7

V IH -

V IL -

DQ8 ~ DQ15

V IH -

V IL -

tC R P

tRC

tR A S

tRCD

tC S H

tRSH

tCAS

tASR

t RAD

tR A H

tASC

ROW

ADDRESS

tC A H

COLUMN

ADDRESS

tRAL

tWCS

tW P

tW C H

tDS

tDH

DATA-IN

CMOS DRAM

tR P

tCRP

D o nâ²t care

Undefined

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