K4E661612D Datasheet, PDF (23/36 Pages) Samsung semiconductor – CMOS DRAM

Industrial Temperature
K4E661612D,K4E641612D
HYPER PAGE MODE LOWER BYTE READ CYCLE
CMOS DRAM
VIH -
RAS
VIL -
tRASP
tRP
¡ó
VIH -
UCAS
VIL -
VIH -
LCAS
VIL -
VIH -
A
VIL -
VIH -
W
VIL -
VIH -
OE
VIL -
DQ0 ~ DQ7
VOH -
VOL -
DQ8 ~ DQ15
VOH -
VOL -
tCRP
tRPC
tCSH
tRCD
tCAS
tH P C
tCP
tCAS
tHPC
tCP
tCAS
tRHCP
tHPC
tC P
tCAS
tREZ
tASR
tRAD
tRAH tASC
tCAH tASC tCAH tASC
tCAH tASC
tCAH
ROW
ADDR
COLUMN
ADDRESS
COLUMN
ADDRESS
COLUMN
ADDR
COLUMN
ADDRESS
tRCS
tR A L
tRCH
tRRH
tAA
tOEA
tAA
tCPA
tCAC
tO C H
tC A C
tAA
tCPA
tOEA
tCAC
tRAC
tDOH
tOLZ
tCLZ
VALID
DATA-OUT
tO E P
tOEZ
VALID
DATA-OUT
VALID
DATA-OUT
OPEN
tCPA
tCAC
tA A
tCHO
tOEP
tOEZ
VALID
DATA-OUT
tOEZ
VALID
DATA-OUT
Don′t care
Undefined