K4E661612D Datasheet, PDF (30/36 Pages) Samsung semiconductor – CMOS DRAM

Industrial Temperature
K4E661612D,K4E641612D
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CMOS DRAM
VIH -
RAS
VIL -
tCSH
tCRP
VIH -
UCAS
VIL -
tCRP
tRCD
VIH -
LCAS
VIL -
tRAD
tRAH
VIH -
A
VIL -
tASR
tASC
ROW
ADDR
COL.
ADDR
tCAS
tCAH
VIH -
W
VIL -
VIH -
OE
VIL -
tRCS
tCWL
tCWD
tAWD
tRWD
tOEA
tRASP
tCP
tH P R W C
tRSH
tCAS
tASC
tCAH
tRAL
COL.
ADDR
tRCS
tR W L
tC W L
tWP
tW P
tCWD
tAWD
tCPWD
tOEA
tRP
tCRP
tRPC
DQ0 ~ DQ7
VI/OH -
VI/OL -
DQ8 ~ DQ15
VI/OH -
VI/OL -
OPEN
tOLZ
tCAC
tAA
tRAC
tOED
tOLZ
tCAC
tO E Z
tDH
tD S
tA A
tCLZ
VALID
DATA-OUT
tCLZ
VALID
DATA-IN
tOED
tOEZ
tDH
tDS
VALID
DATA-OUT
VALID
DATA-IN
Don′t care
Undefined