K4E661612D Datasheet, PDF(14/36 Page) Samsung semiconductor

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K4E661612D Datasheet, PDF (14/36 Pages) Samsung semiconductor – CMOS DRAM

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Industrial Temperature

K4E661612D,K4E641612D

LOWER BYTE WRITE CYCLE ( EARLY WRITE )

NOTE : D OUT = O P E N

V IH -

RAS

V IL -

VIH -

UCAS

V IL -

V IH -

LCAS

V IL -

VIH -

VIL -

V IH -

V IL -

VIH -

V IL -

DQ0 ~ DQ7

V IH -

V IL -

DQ8 ~ DQ15

V IH -

V IL -

tR C

t RAS

tCRP

tRCD

t RAD

tASR

tRAH

ROW

ADDRESS

tASC

tC S H

tRSH

tC A S

tC A H

COLUMN

ADDRESS

tR A L

tWCS

tWCH

tWP

tD S

tD H

DATA-IN

CMOS DRAM

tRP

tC R P

D o n â²t care

Undefined

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