K4E661612D Datasheet, PDF (25/36 Pages) Samsung semiconductor – CMOS DRAM

Industrial Temperature
K4E661612D,K4E641612D
HYPER PAGE MODE WORD WRITE CYCLE ( EARLY WRITE )
NOTE : DOUT = OPEN
CMOS DRAM
VIH -
RAS
VIL -
VIH -
UCAS
VIL -
VIH -
LCAS
VIL -
VIH -
A
VIL -
tR A S P
¡ó
tR H C P
tC R P
tR C D
tHPC
tCP
tCAS
tHPC
tCP
tCAS
tR S H
tCAS
tC R P
tR C D
tHPC
tCP
tCAS
¡ó
tHPC
tCP
tCAS
tRSH
tCAS
tASR
tRAD
tRAH
tCSH
tASC
tCAH
ROW
ADDR
COLUMN
ADDRESS
¡ó
tASC
tCAH
COLUMN
ADDRESS
tR A L
tASC tCAH
¡ó
COLUMN
ADDRESS
¡ó
VIH -
W
VIL -
tW C S tWCH
tW P
tWCS
tWCH
tWP
¡ó
tWCS
tWCH
tWP
tR P
tC R P
VIH -
OE
VIL -
DQ0 ~ DQ7
VIH -
VIL -
DQ8 ~ DQ15
VIH -
VIL -
tDS
tDH
VALID
DATA-IN
tDS
tDH
VALID
DATA-IN
¡ó
¡ó
tD S
tDH
¡ó
VALID
DATA-IN
¡ó
tD S
tDH
¡ó
VALID
DATA-IN
¡ó
tDS tDH
VALID
DATA-IN
tDS tDH
VALID
DATA-IN
Don′t care
Undefined