K4E661612D Datasheet, PDF (29/36 Pages) Samsung semiconductor – CMOS DRAM

Industrial Temperature
K4E661612D,K4E641612D
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CMOS DRAM
VIH -
RAS
VIL -
tRASP
tR P
tCSH
tH P R W C
tC R P
tR P C
VIH -
UCAS
VIL -
VIH -
LCAS
VIL -
VIH -
A
VIL -
tC R P
tRCD
tRAD
tRAH
tASR
tASC
ROW
ADDR
COL.
ADDR
tCAS
tCAH
VIH -
W
VIL -
tRCS
tCWL
tCWD
tAWD
tRWD
tCP
tRSH
tCAS
tASC
COL.
ADDR
tCAH
tRCS
tRAL
tRWL
tCWL
tWP
tW P
tC W D
tAWD
tC P W D
tCRP
VIH -
OE
VIL -
DQ0 ~ DQ7
VI/OH -
VI/OL -
DQ8 ~ DQ15
VI/OH -
VI/OL -
tOEA
tOEA
tCAC
tA A
tRAC
tOED
tOEZ
tDH
tD S
tCAC
tAA
tOED
tOEZ
tDH
tDS
t CLZ
tOLZ
VALID
DATA-OUT
tCLZ
VALID
DATA-IN
tOLZ
VALID
DATA-OUT
VALID
DATA-IN
OPEN
Don′t care
Undefined