K4E661612D Datasheet, PDF (36/36 Pages) Samsung semiconductor – CMOS DRAM

Industrial Temperature
K4E661612D,K4E641612D
PACKAGE DIMENSION
50 TSOP(II) 400mil
CMOS DRAM
Units : Inches (millimeters)
0.034 (0.875)
0.841 (21.35)
MAX
0.821 (20.85)
0.829 (21.05)
0.0315 (0.80)
0.004 (0.10)
0.010 (0.25)
0.047 (1.20)
MAX
0.002 (0.05)
MIN
0.010 (0.25)
0.018 (0.45)
0.018 (0.45)
0.030 (0.75)
0.010 (0.25)
TYP
0 ~ 8^O