K4E661612D Datasheet, PDF (24/36 Pages) Samsung semiconductor – CMOS DRAM

Industrial Temperature
K4E661612D,K4E641612D
HYPER PAGE MODE UPPER BYTE READ CYCLE
CMOS DRAM
VIH -
RAS
VIL -
VIH -
UCAS
VIL -
tCRP
tRASP
tCSH
tR C D
tHPC
tC P
tC A S
¡ó
tHPC
tC P
tCAS
tHPC
tCP
tCAS
tRHCP
tCAS
tRP
tRPC
VIH -
LCAS
VIL -
VIH -
A
VIL -
tC R P
tASR
tRAD
tRAH tASC
tCAH tASC
tCAH
tASC
tCAH tASC tCAH
ROW
ADDR.
COLUMN
ADDRESS
COLUMN
ADDRESS
COLUMN
ADDR.
COLUMN
ADDRESS
tRPC
tREZ
VIH -
W
VIL -
VIH -
OE
VIL -
tRCS
tAA
tCPA
tC A C
tOEA
tCAC
tA A
tCPA
tO C H
tO E A
tRAL
tRCH
tRRH
tCPA
tCAC
tAA
tCHO
tOEP
DQ0 ~ DQ7
VOH -
VOL -
DQ8 ~ DQ15
VOH -
VOL -
OPEN
tCAC
tRAC
tDOH
tOLZ
tCLZ
VALID
DATA-OUT
tOEP
tO E Z
VALID
DATA-OUT
VALID
DATA-OUT
tOEZ
VALID
DATA-OUT
tOEZ
VALID
DATA-OUT
Don′t care
Undefined