K4E661612D Datasheet, PDF(16/36 Page) Samsung semiconductor

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

K4E661612D Datasheet, PDF (16/36 Pages) Samsung semiconductor – CMOS DRAM

◁

Industrial Temperature

K4E661612D,K4E641612D

WORD WRITE CYCLE ( OE CONTROLLED WRITE )

NOTE : DOUT = OPEN

V IH -

RAS

V IL -

VIH -

UCAS

VIL -

V IH -

LCAS

V IL -

V IH -

V IL -

V IH -

V IL -

V IH -

V IL -

DQ0 ~ DQ7

V IH -

V IL -

DQ8 ~ DQ15

VIH -

V IL -

tRAS

tRC

tC R P

tRCD

tCSH

tR S H

tC A S

tC R P

tRCD

tASR

tRAD

tRAH

tASC

ROW

ADDRESS

tC S H

tR S H

t CAS

t CAH

COLUMN

ADDRESS

tR A L

tCWL

tR W L

tW P

tOED

tOEH

tDS

tDH

DATA-IN

tDS

tDH

DATA-IN

CMOS DRAM

tRP

tC R P

D o n â²t c a r e

Undefined

▷