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| K4E661612D Datasheet, PDF (21/36 Pages) Samsung semiconductor – CMOS DRAM | |||
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Industrial Temperature
K4E661612D,K4E641612D
UPPER-BYTE READ - MODIFY - WRITE CYCLE
CMOS DRAM
VIH -
RAS
VIL -
VIH -
UCAS
VIL -
VIH -
LCAS
VIL -
VIH -
A
VIL -
VIH -
W
VIL -
VIH -
OE
VIL -
DQ0 ~ DQ7
VOH -
VOL -
DQ8 ~ DQ15
VI/OH -
VI/OL -
tRAS
tRWC
tCRP
tRCD
tCRP
tRSH
tCAS
tRAD
tASR tRAH
ROW
ADDR
tASC tCAH
COLUMN
ADDRESS
tCSH
tAWD
tCWD
tRWD
tOEA
tRP
tRPC
tR W L
tC W L
tW P
tOLZ
tCLZ
tCAC
tA A
tR A C
OPEN
tOED
tO E Z
VALID
DATA-OUT
tD S tDH
VALID
DATA-IN
Donâ²t care
Undefined
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