K4E661612D Datasheet, PDF (22/36 Pages) Samsung semiconductor – CMOS DRAM

Industrial Temperature
K4E661612D,K4E641612D
HYPER PAGE MODE WORD READ CYCLE
CMOS DRAM
VIH -
RAS
VIL -
VIH -
UCAS
VIL -
VIH -
LCAS
VIL -
VIH -
A
VIL -
VIH -
W
VIL -
VIH -
OE
VIL -
DQ0 ~ DQ7
VOH -
VOL -
DQ8 ~ DQ15
VOH -
VOL -
tRASP
tRP
tC R P
tCSH
tRCD
tHPC
tC P
tCAS
tHPC
tC P
tCAS
tRHCP
tHPC
tCP
tCAS
tCAS
tC R P
tRCD
tCAS
tC P
tCAS
tCP
tCP
tCAS
tCAS
tASR
tRAD
tRAH tASC
tCAH tASC tCAH
ROW
ADDR
COLUMN
ADDRESS
COLUMN
ADDRESS
tASC
tCAH
COLUMN
ADDR
tASC tCAH
COLUMN
ADDRESS
tR E Z
tRCS
tRAL
tRCH
tRRH
tAA
tCPA
tCAC
tOEA
tCAC
tAA
tCPA
tOCH
tO E A
tCAC
tRAC
tD O H
VALID
DATA-OUT
tOLZ
tCLZ
tCAC
tRAC
tD O H
tOLZ
tCLZ
VALID
DATA-OUT
tOEP
tOEZ
VALID
DATA-OUT
tOEP
tOEZ
VALID
DATA-OUT
VALID
DATA-OUT
VALID
DATA-OUT
tCPA
tCAC
tA A
tCHO
tOEP
tOEZ
VALID
DATA-OUT
tOEZ
VALID
DATA-OUT
tOEZ
VALID
DATA-OUT
VALID
DATA-OUT
Don′t care
Undefined