K4E661612D Datasheet, PDF (31/36 Pages) Samsung semiconductor – CMOS DRAM

Industrial Temperature
K4E661612D,K4E641612D
HYPER PAGE READ AND WRITE MIXED CYCLE
CMOS DRAM
VIH -
RAS
VIL -
VIH -
UCAS
VIL -
VIH -
LCAS
VIL -
VIH -
A
VIL -
VIH -
W
VIL -
VIH -
OE
VIL -
DQ0 ~ DQ7
VI/OH -
VI/OL -
DQ8 ~ DQ15
VI/OH -
VI/OL -
READ( tCAC)
tRASP
R E A D (t CPA)
WRITE
tR C D
tC A S
tR A D
tASR
tRAH
tASC
tC A S
tCAH
ROW
ADDR
COLUMN
ADDRESS
tHPC
tCP
tCAS
tHPC
tCP
tCAS
tASC
COLUMN
ADDRESS
tCAH
tHPC
tCP
tCAS
tHPC
tCP
tCAS
tCAH
tASC
COL.
ADDR
tRCS
tRCH tR C S
tRCH
tW C H
tWCS
R E A D (tAA )
tR H C P
tHPC
tC P
tCAS
tHPC
tC P
tCAS
tASC tCAH
COL.
ADDR
tRAL
tWPE
tCPA
tCLZ
tWED
tRP
tRCH
tOEA
tCAC
tAA
tR A C
tWEZ
VALID
DATA-OUT
tOEA
tCAC
tAA
tRAC
tWEZ
VALID
DATA-OUT
tWEZ
tD H
tDS
VALID
DATA-OUT
tW E Z
VALID
DATA-IN
tD H
tDS
VALID
DATA-OUT
VALID
DATA-IN
tA A
tR E Z
VALID
DATA-OUT
tAA
tREZ
VALID
DATA-OUT
Don′t care
Undefined