K4E661612D Datasheet, PDF (28/36 Pages) Samsung semiconductor – CMOS DRAM

Industrial Temperature
K4E661612D,K4E641612D
HYPER PAGE MODE WORD READ - MODIFY - WRITE CYCLE
CMOS DRAM
VIH -
RAS
VIL -
tRASP
tRP
tCSH
tH P R W C
VIH -
UCAS
VIL -
VIH -
LCAS
VIL -
VIH -
A
VIL -
VIH -
W
VIL -
tCRP
tRCD
tCAS
tCRP
tRCD
tCAS
tASR
tRAD
tRAH
tASC
ROW
ADDR
COL.
ADDR
tRCS
tCAH
tC W L
tC W D
tAWD
tR W D
tRSH
tCP
tCAS
tCP
tCAS
tASC
tWP
tCAH
tRAL
COL.
ADDR
tRCS
tRWL
tCWL
tW P
tCWD
tAWD
tCPWD
tCRP
tCRP
VIH -
OE
VIL -
DQ0 ~ DQ7
VI/OH -
VI/OL -
tO E A
tOEA
tCAC
tAA
tRAC
tOED
tO E Z
tDH
tDS
tCAC
tAA
tOED
tO E Z
tDH
tDS
tCLZ
VALID
DATA-OUT
tCLZ
VALID
DATA-IN
VALID
DATA-OUT
VALID
DATA-IN
DQ8 ~ DQ15
VI/OH -
VI/OL -
tCAC
tA A
tRAC
tOED
tOEZ
tDH
tD S
tCAC
tAA
tOED
tOEZ
tDH
tDS
tCLZ
VALID
DATA-OUT
tCLZ
VALID
DATA-IN
VALID
DATA-OUT
VALID
DATA-IN
Don′t care
Undefined