K4E661612D Datasheet, PDF(12/36 Page) Samsung semiconductor

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K4E661612D Datasheet, PDF (12/36 Pages) Samsung semiconductor – CMOS DRAM

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Industrial Temperature

K4E661612D,K4E641612D

UPPER BYTE READ CYCLE

N O T E : D IN = O P E N

CMOS DRAM

V IH -

RAS

V IL -

V IH -

UCAS

V IL -

V IH -

LCAS

V IL -

VIH -

V IL -

VIH -

V IL -

V IH -

V IL -

DQ0 ~ DQ7

VOH -

VOL -

DQ8 ~ DQ15

V OH -

V OL -

tRC

tR A S

tCRP

tRCD

tC S H

tR S H

tCAS

tCRP

tRAD

tASR

tR A H

ROW

ADDRESS

tASC

tCAH

COLUMN

ADDRESS

t RAL

tRCS

tR A C

OPEN

tA A

tOEA

tO L Z

OPEN

t CAC

tCLZ

tR P

tCRP

tR P C

tR R H

tRCH

tCEZ

tOEZ

DATA-OUT

D o n â²t care

Undefined

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