K4E661612D Datasheet, PDF (19/36 Pages) Samsung semiconductor – CMOS DRAM

Industrial Temperature
K4E661612D,K4E641612D
WORD READ - MODIFY - WRITE CYCLE
CMOS DRAM
V IH -
RAS
V IL -
V IH -
UCAS
V IL -
V IH -
LCAS
V IL -
V IH -
A
V IL -
V IH -
W
V IL -
VIH -
OE
V IL -
DQ0 ~ DQ7
V I/OH -
V I/OL -
DQ8 ~ DQ15
V I/OH -
V I/OL -
tRWC
tRAS
tRP
tCRP
tRCD
tRSH
tCAS
tCRP
tRCD
t RAD
tASR tRAH
ROW
ADDR.
tASC t CAH
COLUMN
ADDRESS
tRSH
tCAS
tCSH
tA W D
tC W D
tRWD
tO E A
tR W L
tCWL
tW P
tOLZ
tCLZ
tC A C
tAA
tRAC
tOLZ
tCLZ
tCAC
tA A
tR A C
tO E D
tOEZ
VALID
DATA-OUT
tO E D
tOEZ
VALID
DATA-OUT
tD S
tD H
VALID
DATA-IN
tD S
tD H
VALID
DATA-IN
D o n ′t c a r e
Undefined