K4E661612D Datasheet, PDF(13/36 Page) Samsung semiconductor

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K4E661612D Datasheet, PDF (13/36 Pages) Samsung semiconductor – CMOS DRAM

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Industrial Temperature

K4E661612D,K4E641612D

WORD WRITE CYCLE ( EARLY WRITE )

NOTE : DOUT = OPEN

V IH -

RAS

V IL -

V IH -

UCAS

V IL -

V IH -

LCAS

V IL -

V IH -

V IL -

V IH -

V IL -

V IH -

V IL -

DQ0 ~ DQ7

V IH -

V IL -

DQ8 ~ DQ15

V IH -

V IL -

tRAS

tRC

tCRP

tRCD

tC S H

tR S H

tC A S

tCRP

tRCD

tASR

tR A D

tRAH

tASC

ROW

ADDRESS

tC S H

tR S H

tC A S

tC A H

COLUMN

ADDRESS

tR A L

tW C S

tWCH

tW P

tD S

t DH

DATA-IN

tD S

t DH

DATA-IN

CMOS DRAM

tR P

tC R P

D o n â²t care

Undefined

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